Names | |
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IUPAC name
Nitrogen trifluoride
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Other names
Nitrogen fluoride
Trifluoramine Trifluorammonia |
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Identifiers | |
7783-54-2 | |
3D model (Jmol) | Interactive image |
ChEBI | CHEBI:30231 |
ChemSpider | 22959 |
ECHA InfoCard | 100.029.097 |
EC Number | 232-007-1 |
1551 | |
PubChem | 24553 |
RTECS number | QX1925000 |
UN number | 2451 |
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Properties | |
NF3 | |
Molar mass | 71.00 g/mol |
Appearance | colorless gas |
Odor | moldy |
Density | 3.003 kg/m3 (1 atm, 15 °C) 1.885 g/cm3 (liquid at b.p.) |
Melting point | −207.15 °C (−340.87 °F; 66.00 K) |
Boiling point | −129.06 °C (−200.31 °F; 144.09 K) |
0.021 g/100 mL | |
Vapor pressure | >1 atm (20°C) |
Refractive index (nD)
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1.0004 |
Structure | |
trigonal pyramidal | |
0.234 D | |
Thermochemistry | |
53.26 J/(mol·K) | |
Std molar
entropy (S |
260.3 J/(mol·K) |
Std enthalpy of
formation (ΔfH |
−31.4 kJ/mol −109 kJ/mol |
Gibbs free energy (ΔfG˚)
|
−84.4 kJ/mol |
Hazards | |
Safety data sheet | AirLiquide |
NFPA 704 | |
Flash point | Non-flammable |
Lethal dose or concentration (LD, LC): | |
LC50 (median concentration)
|
2000 ppm (mouse, 4 hr) 9600 ppm (dog, 1 hr) 7500 ppm (monkey, 1 hr) 6700 ppm (rat, 1 hr) 7500 ppm (mouse, 1 hr) |
US health exposure limits (NIOSH): | |
PEL (Permissible)
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TWA 10 ppm (29 mg/m3) |
REL (Recommended)
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TWA 10 ppm (29 mg/m3) |
IDLH (Immediate danger)
|
1000 ppm |
Related compounds | |
Other anions
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nitrogen trichloride nitrogen tribromide nitrogen triiodide ammonia |
Other cations
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phosphorus trichloride arsenic trichloride antimony trichloride bismuth trichloride |
Related binary fluoro-azanes
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tetrafluorohydrazine |
Related compounds
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dinitrogen difluoride |
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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what is ?) | (|
Infobox references | |
Nitrogen trifluoride is the inorganic compound with the formula NF3. This nitrogen-fluorine compound is a colorless, odorless, nonflammable gas. It finds increasing use as an etchant in microelectronics.
Nitrogen trifluoride is used in the plasma etching of silicon wafers. Today nitrogen trifluoride is predominantly employed in the cleaning of the PECVD chambers in the high-volume production of liquid-crystal displays and silicon-based thin-film solar cells. In these applications NF3 is initially broken down in situ by a plasma. The resulting fluorine atoms are the active cleaning agents that attack the polysilicon, silicon nitride and silicon oxide. Nitrogen trifluoride can be used as well with tungsten silicide, and tungsten produced by CVD. NF3 has been considered as an environmentally preferable substitute for sulfur hexafluoride or perfluorocarbons such as hexafluoroethane. The process utilization of the chemicals applied in plasma processes is typically below 20%. Therefore some of the PFCs and also some of the NF3 always escape into the atmosphere. Modern gas abatement systems can decrease such emissions.
Elemental fluorine has been introduced as an environmentally friendly replacement for nitrogen trifluoride in the manufacture of flat-panel displays and thin-film solar cells.