InAs

Indium arsenide

Names
IUPAC name Indium(III) arsenide
Other names Indium monoarsenide
Identifiers
CAS Number	1303-11-3 Y
3D model (Jmol)	Interactive image
ChemSpider	82621 Y
ECHA InfoCard	100.013.742
PubChem CID	91500
InChI InChI=1S/As.In Y Key: RPQDHPTXJYYUPQ-UHFFFAOYSA-N Y InChI=1/As.In/rAsIn/c1-2 Key: RPQDHPTXJYYUPQ-FVESRWMKAB
SMILES [As]#[In]
Properties
Chemical formula	InAs
Molar mass	189.740 g/mol
Density	5.67 g/cm3
Melting point	942 °C (1,728 °F; 1,215 K)
Band gap	0.354 eV (300 K)
Electron mobility	40000 cm2/(V*s)
Thermal conductivity	0.27 W/(cm*K) (300 K)
Refractive index (nD)	3.51
Structure
Crystal structure	Zinc Blende
Lattice constant	a = 6.0583 Å
Thermochemistry
Specific heat capacity (C)	47.8 J·mol−1·K−1
Std molar entropy (So298)	75.7 J·mol−1·K−1
Std enthalpy of formation (ΔfHo298)	-58.6 kJ·mol−1
Hazards
EU classification (DSD) (outdated)	Toxic (T) Dangerous for the environment (N)
R-phrases (outdated)	R23/25, R50/53
S-phrases (outdated)	(S1/2), S20/21, S28, S45, S60, S61
NFPA 704	0 4 0
Related compounds
Other anions	Indium phosphide Indium antimonide
Other cations	Gallium arsenide
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
Y  (what is YN ?)
Infobox references

Indium arsenide, InAs, or indium monoarsenide, is a semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C.

Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers.

Indium arsenide is similar to gallium arsenide and is a direct bandgap material.

Indium arsenide is sometimes used together with indium phosphide. Alloyed with gallium arsenide it forms indium gallium arsenide - a material with band gap dependent on In/Ga ratio, a method principally similar to alloying indium nitride with gallium nitride to yield indium gallium nitride.

InAs is well known for its high electron mobility and narrow energy bandgap. It is widely used as terahertz radiation source as it is a strong photo-Dember emitter.

Quantum dots can be formed in a monolayer of indium arsenide on indium phosphide or gallium arsenide. The mismatches of lattice constants of the materials create tensions in the surface layer, which in turn leads to formation of the quantum dots. Quantum dots can also be formed in indium gallium arsenide, as indium arsenide dots sitting in the gallium arsenide matrix.