Indium antimonide
 |
|
 |
|
| Identifiers | |
|---|---|
|
3D model (Jmol)
|
|
| ChemSpider | |
| ECHA InfoCard | 100.013.812 |
| EC Number | 215-192-3 |
|
PubChem CID
|
|
| RTECS number | NL1105000 |
| UN number | 1549 |
|
|
|
|
| Properties | |
| InSb | |
| Molar mass | 236.58 g·mol−1 |
| Appearance | Dark grey, metallic crystals |
| Density | 5.775 g cm−3 |
| Melting point | 527 °C (981 °F; 800 K) |
| Band gap | 0.17 eV |
| Electron mobility | 7.7 mC s g−1 (at 27 °C) |
| Thermal conductivity | 180 mW K−1 cm−1 (at 27 °C) |
|
Refractive index (nD)
|
4.0 |
| Structure | |
| Zincblende | |
| T2d-F-43m | |
| Tetrahedral | |
| Hazards | |
| GHS pictograms |
 
|
| GHS signal word | WARNING |
| H302, H332, H411 | |
| P273 | |
|
EU classification (DSD)
|
 Xn  N
|
| R-phrases | R20/22, R51/53 |
| S-phrases | S61 |
|
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
|
|
 (what is   ?) |
|
| Infobox references | |
Indium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow-gap semiconductor material from the III-V group used in infrared detectors, including thermal imaging cameras, FLIR systems, infrared homing missile guidance systems, and in infrared astronomy. The indium antimonide detectors are sensitive between 1–5 µm wavelengths. Indium antimonide was a very common detector in the old, single-detector mechanically scanned thermal imaging systems. Another application is as a terahertz radiation source as it is a strong photo-Dember emitter.
The intermetallic compound was first reported by Liu and Peretti in 1951, who gave its homogeneity range, structure type, and lattice constant. Polycrystalline ingots of InSb were prepared by Heinrich Welker in 1952, although they were not very pure by today's semiconductor standards. Welker was interested in systematically studying the semiconducting properties of the III-V compounds. He noted how InSb appeared to have a small direct band gap and a very high electron mobility. InSb crystals have been grown by slow cooling from liquid melt at least since 1954.
InSb has the appearance of dark-grey silvery metal pieces or powder with vitreous lustre. When subjected to temperatures over 500 °C, it melts and decomposes, liberating antimony and antimony oxide vapors.
InSb is a narrow-gap semiconductor with an energy band gap of 0.17 eV at 300 K and 0.23 eV at 80 K. The crystal structure is zincblende with a 0.648 nm lattice constant.
...
Wikipedia