Zinc telluride
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| Identifiers | |
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| ECHA InfoCard | 100.013.874 |
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PubChem CID
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| Properties | |
| ZnTe | |
| Molar mass | 192.99 g/mol |
| Appearance | red crystals |
| Density | 6.34 g/cm3 |
| Melting point | 1,295 °C; 2,363 °F; 1,568 K |
| Band gap | 2.26 eV |
| Electron mobility | 340 cm2/(V·s) |
| Thermal conductivity | 108 mW/(cm·K) |
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Refractive index (nD)
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3.56 |
| Structure | |
| Zincblende (cubic) | |
| F43m | |
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a = 610.1 pm
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| Tetrahedral (Zn2+) Tetrahedral (Te2−) |
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| Thermochemistry | |
| 264 J/(kg·K) | |
| Related compounds | |
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Other anions
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Zinc oxide Zinc sulfide Zinc selenide |
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Other cations
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Cadmium telluride Mercury telluride |
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Related compounds
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Cadmium zinc telluride |
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Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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| Infobox references | |
Zinc telluride is a binary chemical compound with the formula ZnTe. This solid is a semiconductor material with a direct band gap of 2.26 eV. It is usually a p-type semiconductor. Its crystal structure is cubic, like that for sphalerite and diamond.
ZnTe has the appearance of grey or brownish-red powder, or ruby-red crystals when refined by sublimation. Zinc telluride typically had a cubic (sphalerite, or "zincblende") crystal structure, but can be also prepared as hexagonal crystals (wurtzite structure). Irradiated by a strong optical beam burns in presence of oxygen. Its lattice constant is 0.6101 nm, allowing it to be grown with or on aluminium antimonide, gallium antimonide, indium arsenide, and lead selenide. With some lattice mismatch, it can also be grown on other substrates such as GaAs, and it can be grown in thin-film polycrystalline (or nanocrystalline) form on substrates such as glass, for example, in the manufacture of thin-film solar cells. In the wurtzite (hexagonal) crystal structure, it has lattice parameters a = 0.427 and c = 0.699 nm.
Zinc telluride can be easily doped, and for this reason it is one of the more common semiconducting materials used in optoelectronics. ZnTe is important for development of various semiconductor devices, including blue LEDs, laser diodes, solar cells, and components of microwave generators. It can be used for solar cells, for example, as a back-surface field layer and p-type semiconductor material for a CdTe/ZnTe structure or in PIN diode structures.
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