Doping (semiconductor)

In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical properties. The doped material is referred to as extrinsic semiconductors. A semiconductor doped to such high levels that it acts more like a conductor than a semiconductor is referred to as a degenerate semiconductor.

In the context of phosphors and scintillators, doping is better known as activation. Doping is also used to control the color in some pigments.

The effects of semiconductor doping were long known empirically in such devices as crystal radio detectors and selenium rectifiers. For instance, in 1885 and 1930 respectively Shelford Bidwell and the German scientist Bernhard Gudden reported that the properties of semiconductors were due to the impurities contained within them. However, the process was formally first developed by John Robert Woodyard working at Sperry Gyroscope Company during World War II. The demands of his work on radar denied Woodyard the opportunity to pursue research on semiconductor doping. However, after the war ended, his patent proved the grounds of extensive litigation by Sperry Rand. Related work was performed at Bell Labs by Gordon K. Teal and Morgan Sparks.

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