Extrinsic semiconductor

An extrinsic semiconductor is one that has been doped, that is, into which a doping agent has been introduced, giving it different electrical properties than the intrinsic (pure) semiconductor. This doping involves adding dopant atoms to an intrinsic semiconductor, which changes the electron and hole carrier concentrations of the semiconductor at thermal equilibrium, the temperature at which two adjacent substances exchange no heat energy. Dominant carrier concentrations in an extrinsic semiconductor classify it as either an n-type or p-type semiconductor. The electrical properties of extrinsic semiconductors make them essential components of many electronic devices.

Semiconductor doping is the process that changes an intrinsic semiconductor to an extrinsic semiconductor. During doping, impurity atoms are introduced to an intrinsic semiconductor. Impurity atoms are atoms of a different element than the atoms of the intrinsic semiconductor. Impurity atoms act as either donors or acceptors to the intrinsic semiconductor, changing the electron and hole concentrations of the semiconductor. Impurity atoms are classified as donor or acceptor atoms based on the effect they have on the intrinsic semiconductor.

Donor impurity atoms have more valence electrons than the atoms they replace in the intrinsic semiconductor lattice. Donor impurities "donate" their extra valence electrons to a semiconductor's conduction band, providing excess electrons to the intrinsic semiconductor. Excess electrons increase the electron carrier concentration (n₀) of the semiconductor, making it n-type.

Acceptor impurity atoms have fewer valence electrons than the atoms they replace in the intrinsic semiconductor lattice. They "accept" electrons from the semiconductor's valence band. This provides excess holes to the intrinsic semiconductor. Excess holes increase the hole carrier concentration (p₀) of the semiconductor, creating a p-type semiconductor.

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