Backside illumination

A back-illuminated sensor, also known as backside illumination (BSI or BI) sensor, is a type of digital image sensor that uses a novel arrangement of the imaging elements to increase the amount of light captured and thereby improve low-light performance. The technique was used for some time in specialized roles like low-light security cameras and astronomy sensors, but was complex to build and required further refinement to become widely used. Sony was the first to reduce these problems and their costs sufficiently to introduce a 5-megapixel 1.75 µm BI CMOS sensor at general consumer prices in 2009. BI sensors from OmniVision Technologies have since been used in consumer electronics from other manufacturers as in the HTC EVO 4G Android smart phone, and as a major selling point for the camera in Apple's iPhone 4.

A traditional, front-illuminated digital camera is constructed in a fashion similar to the human eye, with a lens at the front and photodetectors at the back. This traditional orientation of the sensor places the active matrix of the digital camera image sensor—a matrix of individual picture elements—on its front surface and simplifies manufacturing. The matrix and its wiring, however, reflect some of the light, and thus the photocathode layer can only receive the remainder of the incoming light; the reflection reduces the signal that is available to be captured.

A back-illuminated sensor contains the same elements, but arranges the wiring behind the photocathode layer by flipping the silicon wafer during manufacturing and then thinning its reverse side so that light can strike the photocathode layer without passing through the wiring layer. This change can improve the chance of an input photon being captured from about 60% to over 90%, with the greatest difference realised when pixel size is small, as the light capture area gained in moving the wiring from the top (light incident) to bottom surface (paraphrasing the BSI design) is proportionately smaller for a larger pixel. BSI-CMOS sensors are most advantageous in partial sun and other low light conditions. Placing the wiring behind the light sensors is similar to the difference between a cephalopod eye and a vertebrate eye. Orienting the active matrix transistors behind the photocathode layer can lead to a host of problems, such as cross-talk, which causes noise, dark current, and color mixing between adjacent pixels. Thinning also makes the silicon wafer more fragile. These problems could be solved through improved manufacturing processes, but only at the cost of lower yields, and consequently higher prices. Despite these issues, early BI sensors found uses in niche roles where their better low-light performance was important. Early uses included industrial sensors, security cameras, microscope cameras and astronomy systems.

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