CMOS sensor

An active-pixel sensor (APS) is an image sensor consisting of an integrated circuit containing an array of pixel sensors, each pixel containing a photodetector and an active amplifier. There are many types of active pixel sensors including the CMOS APS used most commonly in cell phone cameras, web cameras, most digital pocket cameras since 2010, and in most DSLRs. Such an image sensor is produced using CMOS technology (and is hence also known as a CMOS sensor), and has emerged as an alternative to charge-coupled device (CCD) image sensors.

The term active pixel sensor is also used to refer to the individual pixel sensor itself, as opposed to the image sensor; in that case the image sensor is sometimes called an active pixel sensor imager, or active-pixel image sensor.

The term active pixel sensor was coined in 1985 by Tsutomu Nakamura who worked on the Charge Modulation Device active pixel sensor at Olympus, and more broadly defined by Eric Fossum in a 1993 paper.

Image sensor elements with in-pixel amplifiers were described by Noble in 1968, by Chamberlain in 1969, and by Weimer et al. in 1969, at a time when passive-pixel sensors – that is, pixel sensors without their own amplifiers – were being investigated as a solid-state alternative to vacuum-tube imaging devices. The MOS passive-pixel sensor used just a simple switch in the pixel to read out the photodiode integrated charge. Pixels were arrayed in a two-dimensional structure, with an access enable wire shared by pixels in the same row, and output wire shared by column. At the end of each column was an amplifier. Passive-pixel sensors suffered from many limitations, such as high noise, slow readout, and lack of scalability. The addition of an amplifier to each pixel addressed these problems, and resulted in the creation of the active-pixel sensor. Noble in 1968 and Chamberlain in 1969 created sensor arrays with active MOS readout amplifiers per pixel, in essentially the modern three-transistor configuration. The CCD was invented in October 1969 at Bell Labs. Because the MOS process was so variable and MOS transistors had characteristics that changed over time (Vth instability), the CCD's charge-domain operation was more manufacturable and quickly eclipsed MOS passive and active pixel sensors. A low-resolution "mostly digital" N-channel MOSFET imager with intra-pixel amplification, for an optical mouse application, was demonstrated in 1981.

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