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Zirconium diboride

Zirconium diboride
Magnesium-diboride-3D-balls.png
ZrB2 STM crop.png
STM image of the (2×2)-reconstructed ZrB2 (0001) surface
Names
IUPAC name
Zirconium diboride
Other names
ZrB2
Identifiers
ECHA InfoCard 100.031.772
Properties
ZrB2
Molar mass 112.85 g/mol
Appearance grey-black powder
Density 6.085 g/cm3
Melting point ~3246 °C
Insoluble
Structure
Hexagonal, hP3
P6/mmm, No. 191
Hazards
Main hazards Uninvestigated
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
YesY  (what is YesYN ?)
Infobox references

Zirconium diboride (ZrB2) is a highly covalent refractory ceramic material with a hexagonal crystal structure. ZrB2 is an ultra high temperature ceramic (UHTC) with a melting point of 3246 °C. This along with its relatively low density of ~6.09 g/cm3 (measured density may be higher due to hafnium impurities) and good high temperature strength makes it a candidate for high temperature aerospace applications such as hypersonic flight or rocket propulsion systems. It is an unusual ceramic, having relatively high thermal and electrical conductivities, properties it shares with isostructural titanium diboride and hafnium diboride.

ZrB2 parts are usually hot pressed (pressure applied to the heated powder) and then machined to shape. Sintering of ZrB2 is hindered by the material's covalent nature and presence of surface oxides which increase grain coarsening before densification during sintering. Pressureless sintering of ZrB2 is possible with sintering additives such as boron carbide and carbon which react with the surface oxides to increase the driving force for sintering but mechanical properties are degraded compared to hot pressed ZrB2.

Additions of ~30 vol% SiC to ZrB2 is often added to ZrB2 to improve oxidation resistance through SiC creating a protective oxide layer - similar to aluminum's protective alumina layer.

Chemical vapor deposition can be used to prepare zirconium diboride. Hydrogen gas is used to reduce vapors of zirconium tetrachloride and boron trichloride at substrate temperatures greater than 800 °C.


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