Indium gallium phosphide
Indium gallium phosphide (InGaP), also called gallium indium phosphide (GaInP), is a semiconductor composed of indium, gallium and phosphorus. It is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.
It is used mainly in HEMT and HBT structures, but also for the fabrication of high efficiency solar cells used for space applications and, in combination with aluminium (AlGaInP alloy) to make high brightness LEDs with orange-red, orange, yellow, and green colors. Some semiconductor devices such as EFluor Nanocrystal utilise InGaP as their core particle.
Indium gallium phosphide is a solid solution of indium phosphide and gallium phosphide.
Ga0.5In0.5P is a solid solution of special importance, which is almost lattice matched to GaAs. This allows, in combination with (AlxGa1−x)0.5In0.5, the growth of lattice matched quantum wells for red emitting semiconductor lasers, e.g. red emitting (650nm) RCLEDs or VCSELs for PMMA plastic optical fibers.
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