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InSb

Indium antimonide
Ball and stick cell model of indium antimonide
Sample of crystalline indium antimonide
Identifiers
1312-41-0 YesY
3D model (Jmol) Interactive image
ChemSpider 2709929 YesY
ECHA InfoCard 100.013.812
EC Number 215-192-3
PubChem 3468413
RTECS number NL1105000
UN number 1549
Properties
InSb
Molar mass 236.58 g·mol−1
Appearance Dark grey, metallic crystals
Density 5.775 g cm−3
Melting point 527 °C (981 °F; 800 K)
Band gap 0.17 eV
Electron mobility 7.7 mC s g−1 (at 27 °C)
Thermal conductivity 180 mW K−1 cm−1 (at 27 °C)
4.0
Structure
Zincblende
T2d-F-43m
Tetrahedral
Hazards
GHS pictograms The exclamation-mark pictogram in the Globally Harmonized System of Classification and Labelling of Chemicals (GHS) The environment pictogram in the Globally Harmonized System of Classification and Labelling of Chemicals (GHS)
GHS signal word WARNING
H302, H332, H411
P273
Harmful Xn Dangerous for the Environment (Nature) N
R-phrases R20/22, R51/53
S-phrases S61
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
YesY  (what is YesYN ?)
Infobox references

Indium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow-gap semiconductor material from the III-V group used in infrared detectors, including thermal imaging cameras, FLIR systems, infrared homing missile guidance systems, and in infrared astronomy. The indium antimonide detectors are sensitive between 1–5 µm wavelengths. Indium antimonide was a very common detector in the old, single-detector mechanically scanned thermal imaging systems. Another application is as a terahertz radiation source as it is a strong photo-Dember emitter.

The intermetallic compound was first reported by Liu and Peretti in 1951, who gave its homogeneity range, structure type, and lattice constant. Polycrystalline ingots of InSb were prepared by Heinrich Welker in 1952, although they were not very pure by today's semiconductor standards. Welker was interested in systematically studying the semiconducting properties of the III-V compounds. He noted how InSb appeared to have a small direct band gap and a very high electron mobility. InSb crystals have been grown by slow cooling from liquid melt at least since 1954.

InSb has the appearance of dark-grey silvery metal pieces or powder with vitreous lustre. When subjected to temperatures over 500 °C, it melts and decomposes, liberating antimony and antimony oxide vapors.

InSb is a narrow-gap semiconductor with an energy band gap of 0.17 eV at 300 K and 0.23 eV at 80 K. The crystal structure is zincblende with a 0.648 nm lattice constant.


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