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Gallium Arsenide

Gallium arsenide
Samples of gallium arsenide
Gallium arsenide crystal.jpg
Names
Preferred IUPAC name
Gallium arsenide
Identifiers
1303-00-0 YesY
3D model (Jmol) Interactive image
ChemSpider 14087 YesY
ECHA InfoCard 100.013.741
EC Number 215-114-8
MeSH gallium+arsenide
PubChem 14770
RTECS number LW8800000
UN number 1557
Properties
GaAs
Molar mass 144.645 g/mol
Appearance Very dark red, vitreous crystals
Odor garlic-like when moistened
Density 5.3176 g/cm3
Melting point 1,238 °C (2,260 °F; 1,511 K)
insoluble
Solubility soluble in HCL
insoluble in ethanol, methanol, acetone
Band gap 1.424 eV (at 300 K)
Electron mobility 8500 cm2/(V·s) (at 300 K)
Thermal conductivity 0.55 W/(cm·K) (at 300 K)
3.8
Structure
Zinc blende
T2d-F-43m
a = 565.35 pm
Tetrahedral
Linear
Hazards
Safety data sheet External MSDS
GHS pictograms The skull-and-crossbones pictogram in the Globally Harmonized System of Classification and Labelling of Chemicals (GHS) The environment pictogram in the Globally Harmonized System of Classification and Labelling of Chemicals (GHS)
GHS signal word DANGER
H301, H331, H410
P261, P273, P301+310, P311, P501
Toxic T Dangerous for the Environment (Nature) N
R-phrases R23/25, R50/53
S-phrases (S1/2), S20/21, S28, S45, S60, S61
NFPA 704
Flammability code 1: Must be pre-heated before ignition can occur. Flash point over 93 °C (200 °F). E.g., canola oil Health code 3: Short exposure could cause serious temporary or residual injury. E.g., chlorine gas Reactivity code 2: Undergoes violent chemical change at elevated temperatures and pressures, reacts violently with water, or may form explosive mixtures with water. E.g., phosphorus Special hazard W: Reacts with water in an unusual or dangerous manner. E.g., cesium, sodiumNFPA 704 four-colored diamond
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
N  (what is YesYN ?)
Infobox references

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a zinc blende crystal structure.

Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows.

GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including indium gallium arsenide, aluminum gallium arsenide and others.

In the compound, gallium has a +3 oxidation state. Gallium arsenide single crystals can be prepared by three industrial processes:

Alternative methods for producing films of GaAs include:

Oxidation of GaAs occurs in air and degrades performance of the semiconductor. The surface can be passivated by depositing a cubic gallium(II) sulfide layer using a tert-butyl gallium sulfide compound such as (t
BuGaS)
7.


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