Static induction transistor

Static induction transistor (SIT) is a high power, high frequency transistor device. It is a vertical structure device with short multichannel. Being a vertical device, the SIT structure offers advantages in obtaining higher breakdown voltages than a field-effect transistor (FET). For the SIT, it is not limited by the surface breakdown between gate and drain, and can operate at a very high current and voltage.

An SIT has:

The SIT was invented by Japanese engineers Jun-ichi Nishizawa and Y. Watanabe in 1950.

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