Silicon nanowire

Silicon nanowires, also referred to as SiNWs, are a type of nanowire most often formed from a silicon precursor by etching of a solid or through catalyzed growth from a vapor or liquid phase. Initial synthesis is often accompanied by thermal oxidation steps to yield structures of accurately tailored size and morphology. SiNWs exhibit unique properties that arise from an unusual quasi one-dimensional electronic structure and are the subject of research across numerous disciplines and applications. In particular SiNWs are frequently studied towards applications including photovoltaics, nanowire batteries, thermoelectrics and non-volatile memory.

Owing to their unique physical and chemical properties, silicon nanowires are a promising candidate for a wide range of applications that draw on their unique physico-chemical characteristics, which differ from those of bulk Silicon material.

SiNWs exhibit charge trapping behavior which renders such systems of value in applications necessitating electron hole separation such as photovoltaics, and photocatalysts.

Charge trapping behaviour and tuneable surface governed transport properties of SiNWs render this category of nanostructures of interest towards use as Metal Insulator Semiconductors and Field Effect Transistors, with further applications as nanoelectronic storage devices, in flash memory, logic devices as well as chemical and biological sensors.

The ability for lithium ions to intercalate into silicon structures renders various Si nanostructures of interest towards applications as anodes in Li-ion batteries (LiBs). SiNWs are of particular merit as such anodes as they exhibit the ability to undergo significant lithiation while maintaining structural integrity and electrical connectivity.

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