Schottky diode
Various Schottky barrier diodes: Small signal RF devices (left), medium and high power Schottky rectifying diodes (middle and right)
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| Type | Passive |
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| Invented | Walter H. Schottky |
| Pin configuration | anode and cathode |
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The Schottky diode (named after German physicist Walter H. Schottky), also known as hot carrier diode, is a semiconductor diode formed by the junction of a semiconductor with a metal. It has a low forward voltage drop and a very fast switching action. The cat's-whisker detectors used in the early days of wireless and metal rectifiers used in early power applications can be considered primitive Schottky diodes.
When sufficient forward voltage is applied, a current flows in the forward direction. A silicon diode has a typical forward voltage of 600–700 mV, while the Schottky's forward voltage is 150 – 450 mV. This lower forward voltage requirement allows higher switching speeds and better system efficiency.
A metal–semiconductor junction is formed between a metal and a semiconductor, creating a Schottky barrier (instead of a semiconductor–semiconductor junction as in conventional diodes). Typical metals used are molybdenum, platinum, chromium or tungsten, and certain silicides (e.g., palladium silicide and platinum silicide), whereas the semiconductor would typically be n-type silicon. The metal side acts as the anode, and n-type semiconductor acts as the cathode of the diode. This Schottky barrier results in both very fast switching and low forward voltage drop.
The choice of the combination of the metal and semiconductor determines the forward voltage of the diode. Both n- and p-type semiconductors can develop Schottky barriers. However, the p-type typically has a much lower forward voltage. As the reverse leakage current increases dramatically with lowering the forward voltage, it can not be too low, so the usually employed range is about 0.5–0.7 V, and p-type semiconductors are employed only rarely. Titanium silicide and other refractory silicides, which are able to withstand the temperatures needed for source/drain annealing in CMOS processes, usually have too low a forward voltage to be useful, so processes using these silicides therefore usually do not offer Schottky diodes.
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