Radiative recombination

In the solid-state physics of semiconductors, carrier generation and recombination are processes by which mobile charge carriers (electrons and electron holes) are created and eliminated. Carrier generation and recombination processes are fundamental to the operation of many optoelectronic semiconductor devices, such as photodiodes, LEDs and laser diodes. They are also critical to a full analysis of p-n junction devices such as bipolar junction transistors and p-n junction diodes.

The electron–hole pair is the fundamental unit of generation and recombination, corresponding to an electron transitioning between the valence band and the conduction band where generation of electron is a transition from the valence band to the conduction band and recombination leads to a reverse transition.

Like other solids, semiconductor materials have an electronic band structure determined by the crystal properties of the material. The actual energy distribution among the electrons is described by the Fermi level and the temperature of the electrons. At absolute zero temperature, all of the electrons have energy below the Fermi level; but at non-zero temperatures the energy levels are filled following a Boltzmann distribution.

In doped semiconductors the Fermi level lies in the middle of a forbidden band or band gap between two allowed bands called the valence band and the conduction band. The valence band, immediately below the forbidden band, is normally very nearly completely occupied. The conduction band, above the Fermi level, is normally nearly completely empty. Because the valence band is so nearly full, its electrons are not mobile, and cannot flow as electric current.

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