Low-temperature polycrystalline silicon

Low-temperature polycrystalline silicon (LTPS) is polycrystalline silicon that has been synthesized at relatively low temperatures (~650 °C and lower) compared to in traditional methods (above 900 °C). LTPS is important for display industries, since the use of large glass panels prohibits exposure to deformative high temperatures. More specifically, the use of polycrystalline silicon in thin-film transistors (LTPS-TFT) has high potential for large-scale production of electronic devices like flat panel LCD displays or image sensors.

Polycrystalline silicon (p-Si) is a pure and conductive form of the element composed of many crystallites, or grains of highly ordered crystal lattice. In 1984, studies showed that amorphous silicon (a-Si) is an excellent precursor for forming p-Si films with stable structures and low surface roughness. Silicon film is synthesized by low-pressure chemical vapor deposition (LPCVD) to minimize surface roughness. First, amorphous silicon is deposited at 560–640 °C. Then it is thermally annealed (recrystallized) at 950–1000 °C. Starting with the amorphous film, rather than directly depositing crystals, produces a product with a superior structure and a desired smoothness. In 1988, researchers discovered that further lowering temperature during annealing, together with advanced plasma-enhanced chemical vapor deposition (PECVD),could facilitate even higher degrees of conductivity. These techniques have profoundly impacted the microelectronics, photovoltaic, and display enhancement industries.

Amorphous silicon TFTs have been widely used in liquid-crystal display (LCD) flat panels because they can be assembled into complex high-current driver circuits. Amorphous Si-TFT electrodes drive the alignment of crystals in LCDs. The evolution to LTPS-TFTs can have many benefits such as higher device resolution, lower synthesis temperature, and reduced price of essential substrates. However, LTPS-TFTs also have several drawbacks. For example, the area of TFTs in traditional a-Si devices is large, resulting in a small aperture ratio (the amount of area which is not blocked by the opaque TFT and thus admits light). The incompatibility of different aperture ratios prevents LTPS-based complex circuits and drivers from being integrated into a-Si material. Additionally, the quality of LTPS decreases over time due to an increase in temperature upon turning on the transistor, which degrades the film by breaking the Si-H bonds in the material. This would cause the device to suffer from drain breakdown and current leakage, most notably in small and thin transistors, which dissipate heat poorly.

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