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Indium oxide

Indium(III) oxide
Kristallstruktur Lanthanoid-C-Typ.png
Names
Other names
indium trioxide, indium sesquioxide
Identifiers
3D model (Jmol)
ChemSpider
ECHA InfoCard 100.013.813
PubChem CID
Properties
In2O3
Molar mass 277.64 g/mol
Appearance yellowish green odorless crystals
Density 7.179 g/cm3
Melting point 1,910 °C (3,470 °F; 2,180 K)
insoluble
Band gap ~3 eV (300 K)
−56.0·10−6 cm3/mol
Structure
Cubic, space group Ia3 No. 206, cI80, a = 1.0117(1) nm, Z = 16
Hazards
not listed
NFPA 704
Flammability code 0: Will not burn. E.g., water Health code 1: Exposure would cause irritation but only minor residual injury. E.g., turpentine Reactivity code 0: Normally stable, even under fire exposure conditions, and is not reactive with water. E.g., liquid nitrogen Special hazards (white): no codeNFPA 704 four-colored diamond
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
YesY  (what is YesYN ?)
Infobox references

Indium(III) oxide (In2O3) is a chemical compound, an amphoteric oxide of indium.

Amorphous indium oxide is insoluble in water but soluble in acids, whereas crystalline indium oxide is insoluble in both water and acids. The crystalline form exist in two phases, the cubic (bixbyite type) and rhombohedral (corundum type). Both phases have a band gap of about 3 eV. The parameters of the cubic phase are listed in the infobox. The rhombohedral phase is produced at high temperatures and pressures or when using non-equilibrium growth methods. It has a space group R3c No. 167, Pearson symbol hR30, a = 0.5487 nm, b = 0.5487 nm, c = 0.57818 nm, Z = 6 and calculated density 7.31 g/cm3.

Thin films of chromium-doped indium oxide (In2−xCrxO3) are a magnetic semiconductor displaying high-temperature ferromagnetism, single-phase crystal structure, and semiconductor behavior with high concentration of charge carriers. It has possible applications in spintronics as a material for spin injectors.

Thin polycrystalline films of indium oxide doped with Zn are highly conductive (conductivity ~105 S/m) and even superconductive at helium temperatures. The superconducting transition temperature Tc depends on the doping and film structure and is below 3.3 K.

Bulk samples can be prepared by heating indium(III) hydroxide or the nitrate, carbonate or sulfate. Thin films of indium oxide can be prepared by sputtering of indium target in argon/oxygen atmosphere. They can be used as diffusion barriers ("barrier metals") in semiconductors, e.g. to inhibit diffusion between aluminium and silicon.


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