Everspin
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| public company | |
| Traded as | NASDAQ: MRAM |
| Industry | Semiconductors |
| Founded | 2008 |
| Headquarters | Chandler, Arizona, USA |
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Area served
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Worldwide |
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Key people
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Phill LoPresti, President, CEO, and Director |
| Products | MRAM memory, non-volatile memory products |
| Website | www.everspin.com |
Everspin Technologies is a public semiconductor company that develops and manufactures magnetic RAM or Magnetoresistive Random Access Memory (MRAM), including stand-alone and embedded MRAM products as well as Spin-torque MRAM (ST-MRAM). MRAM has the performance characteristics similar to standard Random Access Memory (RAM) while also having the persistence of non-volatile memory, meaning that it will not lose its charge or data if power is removed from the system. This characteristic makes MRAM suitable for a large number of embedded applications, such as automotive and industrial where both performance and permanence are required.
The company was formed in June 2008 as a spin out of Freescale Semiconductor. In 2014 Everspin partnered with GLOBALFOUNDRIES for production of in-plane and perpendicular MTJ ST-MRAM on 300mm wafers, utilizing 40nm and 28nm node processes. Everspin went public with an IPO in October 2016.
The path to MRAM began in 1984 when the GMR Effect discovered by IBM. Twelve years later, in 1996, Spin Torque Transfer is proposed, enabling a magnetic tunnel junction or spin valve to be modified with a spin-polarized current. At this point, Motorola began their MRAM research, which led to their first MTJ in 1998. A year later, in 1999, Motorola developed a 256Kb MRAM Test Chip that enabled work to begin on productizing MRAM technology, which was followed by a patent for Toggle being granted to Motorola in 2002. The industry's first MRAM (4Mb) product became commercially available
Much of the early MRAM work was done by Motorola, who spun off their semiconductor business in 2004, creating Freescale Semiconductor, which eventually spun out the MRAM business as Everspin Technologies.
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