Drain-induced barrier lowering

Drain-induced barrier lowering or DIBL is a short-channel effect in MOSFETs referring originally to a reduction of threshold voltage of the transistor at higher drain voltages. In a classic planar field-effect transistor with a long channel, the bottleneck in channel formation occurs far enough from the drain contact that it is electrostatically shielded from the drain by the combination of the substrate and gate, and so classically the threshold voltage was independent of drain voltage. In short-channel devices this is no longer true: The drain is close enough to gate the channel, and so a high drain voltage can open the bottleneck and turn on the transistor prematurely.

The origin of the threshold decrease can be understood as a consequence of charge neutrality: the Yau charge-sharing model. The combined charge in the depletion region of the device and that in the channel of the device is balanced by three electrode charges: the gate, the source and the drain. As drain voltage is increased, the depletion region of the p-n junction between the drain and body increases in size and extends under the gate, so the drain assumes a greater portion of the burden of balancing depletion region charge, leaving a smaller burden for the gate. As a result, the charge present on the gate retains charge balance by attracting more carriers into the channel, an effect equivalent to lowering the threshold voltage of the device.

In effect, the channel becomes more attractive for electrons. In other words, the potential energy barrier for electrons in the channel is lowered. Hence the term "barrier lowering" is used to describe these phenomena. Unfortunately, it is not easy to come up with accurate analytical results using the barrier lowering concept.

Barrier lowering increases as channel length is reduced, even at zero applied drain bias, because the source and drain form pn junctions with the body, and so have associated built-in depletion layers associated with them that become significant partners in charge balance at short channel lengths, even with no reverse bias applied to increase depletion widths.

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