65 nm

The 65 nanometer (65 nm) process is advanced lithographic node used in volume CMOS semiconductor fabrication. Printed linewidths (i.e., transistor gate lengths) can reach as low as 25 nm on a nominally 65 nm process, while the pitch between two lines may be greater than 130 nm. For comparison, cellular ribosomes are about 20 nm end-to-end. A crystal of bulk silicon has a lattice constant of 0.543 nm, so such transistors are on the order of 100 atoms across. By September 2007, Intel, AMD, IBM, UMC, Chartered and TSMC were producing 65 nm chips.

While feature sizes may be drawn as 65 nm or less, the wavelengths of light used for lithography are 193 nm and 248 nm. Fabrication of sub-wavelength features requires special imaging technologies, such as optical proximity correction and phase-shifting masks. The cost of these techniques adds substantially to the cost of manufacturing sub-wavelength semiconductor products, with the cost increasing exponentially with each advancing technology node. Furthermore, these costs are multiplied by an increasing number of mask layers that must be printed at the minimum pitch, and the reduction in yield from printing so many layers at the cutting edge of the technology. For new integrated circuit designs, this factors into the costs of prototyping and production.

Gate thickness, another important dimension, is reduced to as little as 1.2 nm (Intel). Only a few atoms insulate the "switch" part of the transistor, causing charge to flow through it. This undesired effect, leakage, is caused by quantum tunneling. The new chemistry of high-k gate dielectrics must be combined with existing techniques including substrate bias and multiple threshold voltages to prevent leakage from prohibitively consuming power.

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